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| (R) SMP80MC-270 TELECOM EQUIPMENT PROTECTION: TRISILTM FEATURES s s s s s s s Bidirectional crowbar protection Voltage: 270V Low VBO / VR ratio Micro capacitance 15pF typ @ 50V Low leakage current : IR = 2A max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 80 A (10/1000s) SMB (JEDEC DO-214AA) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: Analog and digital line cards (xDSL, T1/ E1, ISDN...) Terminals (phone, fax, modem...) and central office equipment s s SCHEMATIC DIAGRAM DESCRIPTION The SMP80MC-270 is a micro capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital line cards (xDSL, T1/E1, ISDN...). BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B approved (file: E136224) and comply with the following standards GR-1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. September 2003 - Ed: 0B 1/8 SMP80MC-270 IN COMPLIANCES WITH THE FOLLOWING STANDARDS STANDARD GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 8000 15000 4000 2000 4000 2000 4000 4000 1500 800 1000 Required Minimum serial Voltage Current peak current resistor to meet Waveform waveform (A) standard ( ) 2/10 s 10/1000 s 2/10 s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 10/160 s 10/560 s 9/720 s 500 100 500 100 150 37.5 2/10 s 10/1000 s 2/10 s 2/10 s 5/310 s 5 2.5 10 0 10 0 0 0 0 0 0 0 0 0 2.5 0 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 10/160 s 10/560 s 5/320 s THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to leads Parameter Junction to ambient with recommended footprint Value 100 20 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at VRM Continuous reverse voltage Leakage current at VR Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance 2/8 SMP80MC-270 ABSOLUTE RATINGS (Tamb = 25C) Symbol Ipp Parameter Repetitive peak pulse current: 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s IFS ITSM Fail-safe mode : maximum current (note 1) Non repetitive surge peak on-state current (Sinusoidal) 8/20 s t = 20ms t = 16.6ms t = 0.2s t = 2s t = 16.6ms t = 20ms 80 250 100 120 150 250 250 5 28 30 14 7 7.5 7.8 260 - 55 to + 150 150 A Value Unit kA A It TL Tstg Tj It value for fusing Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature As C C C Note 1: in fail safe mode, the device acts as a short circuit. Repetitive peak pulse current tr: rise time (s) tp: pulse duration time (s) ex: Pulse waveform 10/1000s tr = 10s tp = 1000s ELECTRICAL PARAMETERS (Tamb = 25C) Type IRM @ VRM max. A SMP80MC-270 Note 1: Note 2: Note 3: % IPP 100 50 0 tr tp t IR @ VR max. Note 1 A 50 V 270 Static Dynamic VBO @ IBO VBO max. max. max Note 2 Note 3 V 345 Note 4: Note 5: Note 6: IH min. Note 4 mA 150 C typ. Note 5 pF 15 C typ. Note 6 pF 30 V 243 V 335 mA 800 2 IR measured at VR guarantee VBR min VR See functional test circuit 1 See test circuit 2 See functional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz 3/8 SMP80MC-270 Fig. 1: Non repetitive surge peak on-state current versus overload duration. ITSM(A) 40 35 30 25 20 15 10 5 F=50Hz Tj initial = 25C Fig. 2: On-state voltage versus on-state current (typical values) IT(A) 100 Tj=25C t(s) 0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 10 0 1 2 3 VT(V) 4 5 6 7 8 Fig. 3: Relative variation of holding current versus junction temperature . IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4: Relative variation of breakover voltage versus junction temperature. VBO[Tj] / VBO[Tj=25C] 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 Tj(C) 0.95 0.94 -40 -30 -20 -10 0 10 20 30 Tj(C) 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of leakage current versus reverse voltage applied (typical values). IR[Tj] / IR[Tj=25C] 1.E+03 VR=243V Fig. 6: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35m, recommended pad layout). Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 1.E+02 0.7 0.6 0.5 0.4 1.E+01 0.3 0.2 Tj(C) 1.E+00 25 50 75 100 125 0.1 0.0 1.E-02 1.E-01 1.E+00 tp(s) 1.E+01 1.E+02 1.E+03 4/8 SMP80MC-270 Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C [VR] / C [VR=2V] 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1 10 100 1000 F =1MHz VOSC = 1VRMS Tj = 25C VR(V) TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS 100 V / s, di/dt < 10 A / s, Ipp = 80 A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s, di/dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 5/8 SMP80MC-270 TEST CIRCUIT 2 FOR IBO and VBO parameters : K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE : Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . TEST CIRCUIT 3 FOR IH PARAMETER R Surge generator VBAT = - 48 V D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the off-state within 50 ms max. 6/8 SMP80MC-270 PACKAGE MECHANICAL DATA SMB (Plastic) E1 DIMENSIONS REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c A1 E E1 D b C L A2 L FOOT PRINT in millimeters (inches) 2.3 (0.09) 1.52 (0.059) 2.75 (0.108) 1.52 (0.059) 7/8 SMP80MC-270 ORDER CODE SMP 80 MC - 270 Micro capacitance Trisil Surface Mount Voltage IPP = 80 A Ordering type SMP80MC-270 Marking TP27 Package SMB Weight 0.11g Base qty 2500 Delivery mode Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 8/8 |
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